Planar waveguides produced by implanting Si and C ions in rutile

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

On optical activity of Er3+ ions in Si-rich SiO2 waveguides

Photoluminescence spectroscopy was used to explore the optical activity of Er3+ ions in Si-rich SiO2 waveguides prepared by ion implantation. Measurements were performed for a series of materials characterized by different Si excess levels, Er concentrations, and annealing temperatures. The highest fraction of optically active Er3+ ions which can be efficiently activated by nonresonant pumping ...

متن کامل

Planar waveguides in ZBLAN fabricated by He ion implantation

Single and double planar waveguides were fabricated by 2 MeV and 4 MeV He implantation in ZBLAN. Calculation of ion implantation parameters, cut-off wavelength measurement and near-field detection indicate that ∆n is negative, typically -1x10.  1999 Optical Society of America OCIS codes: (130.3130) Integrated optics materials; (230.7390) Waveguides, planar.

متن کامل

Si-CMOS-compatible lift-off fabrication of low-loss planar chalcogenide waveguides.

We demonstrate, for the first time to the best of our knowledge, low-loss, Si-CMOS-compatible fabrication of single-mode chalcogenide strip waveguides. As a novel route of chalcogenide glass film patterning, lift-off allows several benefits: leverage with Si-CMOS process compatibility; ability to fabricate single-mode waveguides with core sizes down to submicron range; and reduced sidewall roug...

متن کامل

Ultra-low-loss Ta2O5-core/SiO2-clad planar waveguides on Si substrates

An increasing number of systems and applications depend on photonics for transmission and signal processing. This includes data centers, communications systems, environmental sensing, radar, lidar, and microwave signal generation. Such systems increasingly rely on monolithic integration of traditionally bulk optical components onto the chip scale to significantly reduce power and cost while sim...

متن کامل

Cuts in Directed Planar Networks by Parallel C Omput at Ions

We reduce the exponent to 3 in the case when the network is embedded in the plane beforehand and to 4 otherwise. The reader is supposed to be familiar with graphs, planar graphs, multigraphs and so on (see [1]). We use the well-known method in a similar way as in [4] which consists in the fact that the problem of finding minimum cuts in a network can be reduced to the shortest path problem in i...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Revista Mexicana de Física

سال: 2018

ISSN: 2683-2224,0035-001X

DOI: 10.31349/revmexfis.64.251